| PART |
Description |
Maker |
| M28F512-12B1 M28F512-12C1 M28F512-10C1 28F256 M28F |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory 512千位4Kb的x8整体擦除）Flasxh内存
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M27W512 |
512 KBIT (64KB X8) LOW VOLTAGE OTP EPROM
|
ST Microelectronics
|
| M27C512 |
512 KBIT (64KB X8) UV EPROM AND OTP EPROM
|
ST Microelectronics
|
| M27W512 M27W512-100B6TR M27W512-100F6TR M27W512-10 |
4 Mbit 256Kb x16 Low Voltage UV EPROM and OTP EPROM
Hex D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM 512千位64Kb的x8低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| LH28F800BGH-L LH28F800BGR-TL85 LH28F800BGR-TL12 LH |
Aluminum Polymer Radial Lead Capacitor; Capacitance: 1800uF; Voltage: 4V; Case Size: 8x12 mm; Packaging: Bulk 8 M位（512 KB的16）SmartVoltage闪存
RES CURRENT SENSE .025 OHM 1W 1% 8 M位（512 KB的16）SmartVoltage闪存
8 M-bit (512 kB x 16) SmartVoltage Flash Memories 8 M位（512 KB的16）SmartVoltage闪存
|
http://
Sharp, Corp.
Sharp Corporation
Sharp Electrionic Compo...
|
| SST39VF512 SST39VF512-70-4C-NH SST39VF010 SST39VF0 |
512 Kbit/1 Mbit (x8) multi-purpose flash
From old datasheet system
(SST39VFxxx / SST39LFxxx) 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
x8 Flash EEPROM
|
SST[Silicon Storage Technology Inc]
SST[Silicon Storage Technology, Inc]
|
| UL1242N UL1242 |
Ukad wzmacniacza p.cz.
UL1242N
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
|
List of Unclassifed Manufacturers
Ultra CEMI
ETC
|
| CY14E512Q |
512-Kbit (64 K x 8) SPI nvSRAM
|
Cypress Semiconductor
|
| 28F256 M28F256-90C1TR M28F256-90C3TR M28F256-90C6T |
Octal D-Type Transparent Latches With 3-State Outputs 20-SOIC 0 to 70 256K2K的8，芯片擦除）闪存
Octal D-Type Transparent Latches With 3-State Outputs 20-PDIP 0 to 70 256K32K的8，芯片擦除）闪存
256K(32K x8, Chip Erase)FLASH MEMORY 256K2K的8，芯片擦除）闪存
KAPTON STRAP F/GLASS TUBE PKG/5
Octal D-Type Edge-Triggered Flip-Flops With 3-State Outputs 20-SOIC 0 to 70
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs 20-SO 0 to 70
Octal D-Type Edge-Triggered Flip-Flops With 3-State Outputs 20-PDIP 0 to 70
256K(32K x8 / Chip Erase)FLASH MEMORY
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M93C76-125 M93C66-125 |
Automotive 16-Kbit, 8-Kbit, 4-Kbit, 2-Kbit and 1-Kbit (8-bit or 16-bit wide) MICROWIRE serial EEPROM
|
STMicroelectronics
|
| CY14B512J2-SXIT CY14C512J12 |
512-Kbit (64 K × 8) Serial (I2C) nvSRAM
|
Cypress Semiconductor
|
